Abstract
We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for next generation lithography. For NIL, template inspection and residual layer thickness (RLT) metrology are discussed. An optical-based inspection tool for replica template inspection showed sensitivity for defects below 10 nm with sufficient throughput. Scatterometry was applied for RLT metrology. Feedback control with scatterometry improved RLT uniformity across an imprinting field. For DSA, metrology for image placement and cross-sectional profile are addressed. Design-based scanning electron microscope (SEM) metrology utilizing a die-to-database electron beam (EB) inspection tool was effective for image placement metrology. For the cross-sectional profile, a holistic approach combining scatterometry and critical dimension SEM was developed. The technologies discussed here will be important when NIL and DSA are applied for IC manufacturing, as well as in the development phases of those lithography technologies.
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