Abstract
A recent theory of particle encounter kinetics (M. G. Sceats, J. Chem. Phys. 84 (1986) 5206), which applies for arbitrary bath density and interaction potential, is used to model the high-pressure dependence of the methyl radical recombination rate in argon. The model correctly accounts for the onset of diffusion control when the semiclassical free energy potential surface is used to account for the influence of internal degrees of freedom.
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