Abstract
The electron traps created in the gate oxide of metal oxide semiconductor devices under irradiation or electric stress such as injection of hot carriers or Fowler-Nordheim electron injection (FNEI) degrade the reliability of integrated circuits and contribute to oxide breakdown. The areal density, capture cross-section and centroid of each type of electron trap and their variation with the FNEI fluence are determined using avalanche electron injection (AEI) and combining midgap voltage ( V MG) and negative Fowler-Nordheim voltage ( V FN −) measurements.
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