Abstract
Simulating the magnetization dynamics in a perpendicularly-magnetized free layer with Langevin equation, we investigated methods for reducing write error rate (WER) in voltage-induced switching with long tolerance of voltage-pulse duration (tp). The simulation results show that WER can be reduced by increasing the perpendicular anisotropy (Ku) before and after the application of voltage or by increasing both Ku and the in-plane external magnetic field.
Highlights
Voltage-induced magnetization switching1–14 has been attracting a great deal of attention because it enables low-powerconsumption writing in magnetoresistive random access memory (MRAM)
In voltage-induced magnetization switching, anisotropy field is reduced through voltage control of magnetic anisotropy (VCMA) effect,1–5 which induces magnetization precession around external magnetic field
The switching can be completed by turning off the voltage after a half period of precession.6–12. This dynamic switching requires the adjustment of the voltage-pulse duration to stop the precessional motion of the magnetization and to obtain low write error rate (WER)
Summary
Voltage-induced magnetization switching1–14 has been attracting a great deal of attention because it enables low-powerconsumption writing in magnetoresistive random access memory (MRAM). AFFILIATIONS National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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