Abstract

The paper presents establishing quantitative measurement by scanning microwave microscopy (SMM) based on an atomic force microscopy (AFM) for dielectric permittivity of materials. SMM was usually used for observation of electrical defect and uniformity of electrical properties on the sample in many research groups. In this study, we have demonstrated quantitative measurements for dielectric permittivity of barium titanite ((Ba x Sr 1-x )TiO 3 , BSTO) by SMM observation. We developed measurement method and sequence for quantitative measurement of dielectric permittivity materials by vector network analyzer (VNA) measurement trace during SMM tip contacting to sample surface. From measurement trace, basically resonant trace, resonant frequency, f 0 , and quality factor, Q, were calculated, then, dependence of f 0 and Q on complex permittivity of the sample. Here, we demonstrate that an SMM is capable of quantitatively characterizing permittivity dielectric materials, e r = 3 ~ 3800, at around 16 GHz.

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