Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters

Abstract

AlN based surface acoustic wave (SAW) filters with an acoustic wavelength (λ) of 8 µm have been fabricated based on sputtered AlN films on sapphire. The acoustic velocity of 1-µm-AlN/Sapphire bilayer structure is 5536 m/s, 60% higher than that of LiNbO3. The central frequency, insertion loss, out-of-band rejection, and bandwidth of fabricated AlN based two-port type SAW filters with a delay gap of λ are 692 MHz, 25.58 dB, 35.40 dB, and 2.7 MHz, respectively. The impact of delay gap on the performance of AlN based filters have been studied experimentally. By the analysis of frequency response of SAW filters with delay gaps of λ, 15λ, and 30λ with and without time gating technique, we find that increase the delay gap of AlN based SAW resonators can improve the out-of-band rejection effectively because of the reduction of electromagnetic coupling, with a cost of a little degradation of insertion loss due to the small propagation loss of AlN/Sapphire bilayer. When the delay gap is increased from λ to 15λ, out-of-band rejection of AlN based filters is increased by 4.75 dB, while the insertion loss is only increased by 0.81 dB. When the delay gap is further increased from 15λ to 30λ, the suppression of out-of-band rejection is not obvious.