Abstract
The circuit of the pulse power supply of a magnetron sputtering system and the circuit of a high voltage generator used to realize the process of pulsed magnetron deposition of diamondlike films on large-area substrates are described. Measurements of the parameters of the plasma produced on pulsed magnetron sputtering of graphite in the argon medium have been performed. The plasma density (1017–1018 cm−3) has been shown to be one or two orders of magnitude higher than that in the case of dc magnetron sputtering and approach the plasma density achievable on vacuum arc cathode sputtering and pulsed laser sputtering. Samples of diamondlike films on crystalline silicon, titanium, and stainless steel have been prepared and examined. It has been demonstrated that high voltage bias pulses applied to the substrate promote production of high-quality diamondlike films showing high adherence to the substrate.
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