Abstract
A novel method for the extraction of the η parameter characterising the µeff(Eeff) curves in FD-SOI Si MOS transistors is proposed. Using this method, it is found that η is about 0.6–0.7 for electrons and 0.3–0.4 for holes, whatever the gate stacks (SiO2, high-k and box oxide). These obtained η values differ significantly from standard bulk ones, justifying the interest of such a η extraction method for FD-SOI architectures.
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