Method for evaluating the parameters of radiation defects and predicting the radiation resistance of MOS transistors

Abstract

A new approach to analysis of the radiation resistance of MOS transistors is proposed, which takes into account both the accumulation of a radiation-induced charge on the surface states and in the volume of oxide and the relaxation processes involving thermal and tunneling leakage of the accumulated charge. The prediction of radiation stability is based upon the knowledge of parameters of the radiation-induced defects, which are determined from the experimental dose dependences established at high dose rates and from the temperature dependences and kinetics of relaxation of the threshold voltage. Once these parameters are determined, the behavior of a MOS transistor under the action of radiation of an arbitrary (including low) intensity can be predicted.