Abstract
The method for evaluating the interface of semiconductor heterojunctions using the free electron laser internal photoemission (FEL-IPE) technique is presented. The nature of the interface in semiconductor heterojunctions plays an important role for determining the behavior and performances of an entire class of nanosemiconductor devices. It is indicated that the measurement using FEL-IPE makes it possible to determine the band discontinuities of semiconductor heterojunctions more precisely.
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