Abstract
The standard method for determining the contact resistance of planar metal-semiconductor interfaces can underestimate the true contact resistance under normal operating conditions, as it relies on the resistivity of the semiconductor material remaining constant during measurement. However, the strong temperature dependence of the resistivity of VO2 requires a modified approach that maintains a constant power density dissipated within the film to account for Joule heating. We develop a method for measuring contact resistance in semiconductors with a high thermal coefficient of resistivity, demonstrate this method with an example, and compare the results with the standard technique.
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