Abstract
AbstractA new method for calculation the effects of composition modulation upon the dielectric properties of semiconductors is proposed. Specific consideration is carried out for ultrathin [001] oriented (AIIICV)m(BIIICV)n superlattices (SL). These SL are formally considered to result from complete A(B) atoms orderiig over a-sublattice in a hypothetical initial structure –bulk mixed crystal (AxB1−x)C with zincblende lattice and x = m/(m + n). From this point of view a variation in dielectric constants tensor (DCT) induced by the ordering can be calculated nearly in a spirit of the phenomenological Landau theory of second-order phase transitions. It is shown that the changes in spatial dispersion of the DCT are expressed through the coefficients at invariants in the expansion of SL thermodynamic potential in a power series of the order parameter components. The way is described for numerical estimation of the thermodynamic potential coefficients from microscopic model of the initial alloy which take account of spatial correlations in A(B) atoms distribution.
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