Methane chemistry involved in a low-pressure electron cyclotron wave resonant plasma discharge

Abstract

Radio frequency (rf) generated methane plasmas are commonly employed in the deposition of hydrogenated amorphous carbon (a-C:H) thin films. However, very little is known about the rf discharge chemistry and how it relates to the deposition process. Consequently, we have characterized a low-pressure methane plasma and compared the results with those obtained theoretically by considering the steady-state kinetics of the chemical processes present in a low-pressure plasma reactor, in order to elucidate the dominant reaction channels responsible for the generation of the active precursors required for film growth. Mass spectrometry measurements of the gas phase indicated little variation in the plasma chemistry with increasing electron temperature. This was later attributed to the partial saturation of the electron-impact dissociation and ionization rate constants at electron temperatures in excess of ∼4 eV. The ion densities in the plasma were also found to be strongly dependent upon the parent neutral concentration in the gas phase, indicating that direct electron-impact reactions exerted greater influence on the plasma chemistry than secondary ion–neutral reactions.