Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)

Abstract

Metavalent Bonding In article number 2300901, Wei Zhang, Matthias Wuttig, and co-workers elucidate how metavalent bonding (MVB) develops across the so called van der Waals (vdW)-like gaps in layered Sb2Te3 and Ge–Sb–Te alloys. By tailoring the degree of MVB across the gaps via uniaxial strain, a large variation of optical reflectivity can be obtained, enabling potential photonic applications.