Abstract

In this paper, a polarization-insensitive absorber with dual-band tunable absorption intensity is proposed. Two absorption bands are generated by introducing external branches into a ring structure. Since the resistance of the loaded PIN diode changes with bias current, the reflectivity of two absorption bands can be dynamically adjusted from almost 0 dB to less than −10 dB at normal incidence. Inductors are loaded on both sides of the metal structure, which guarantees not only that the units are connected during DC feeding, but also the symmetry of the metal structure in RF band to ensure polarization insensitivity. The mechanisms of dual absorption bands and tunable absorption intensity are revealed through the detailed analysis of resonant modes, equivalent circuit model, surface current, and loss density distribution. A sample prototype has also been fabricated, and the measured results are well consistent with the simulated ones. The proposed absorber has the unique advantage of dynamic tuning of dual-band absorption intensity, making it a versatile choice in modern communication, radar, and stealth systems.

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