Abstract
We have examined and measured the density of states (DOS) in a prototypical poly(silylene)-poly(methylphenylsilylene) (PMPSi) using the method of post-transit hole emission signals from traps using the time of flight (TOF) photoconductivity method. The main goal of our measurements was to correlate the metastable states produced both by UV radiation and electron beam and to determine their basic parameters as to their energies and susceptibility for annealing. In the course of measurements we discovered in accordance with our previous observations the fully reversible states around and deeper than 0.55 eV.
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