Abstract
It has been shown that He ++ ions irradiation introduces in Be doped Al 0.5Ga 0.5As MBE layers some metastable defects. After sample illumination at liquid nitrogen ambient with photons of energy below the band gap energy persistent photocapacitance was observed. DLTS measurements performed in darkness after such illumination revealed the presence of additional deep level with energy activation equal to 0.24 eV.
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