Abstract
In indium doped Cd 0.9Mn 0.1Te, the presence of metastable defects has been detected by observation of persistent photoeffects. By DLTS measurements several deep levels have been found and one of them exhibited thermally activated capture cross section, indicating on its metastable character. Photocapacitance measurements performed at liquid nitrogen temperature yield optical threshold energy for the deep-shallow transition equal to around 0.75 eV. This value is 0.63 eV higher than the thermal activation energy. The large difference between these two energies has confirmed strong interaction of related defect with surrounding lattice.
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