Abstract
Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised Α1 state of the donor. We fand that the top of the barrier for the electron recapture to the Αι state is pinned to the conduction band edge and the capture cross-section σ(T —^ oο) is surprisingly small.
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