Abstract
Abstract The self-organized InP islands grown on GaInP buffer layers mismatched to GaAs substrate were utilized to find the influence of the stress between the buffer layers and the islands on the shape of the islands and its distribution. The shape of the islands was elongated with the increasing stress. The self-organized islands at the surface of buffer layers were analyzed by scaling theories to show a periodical distribution. Some kinds of buffer layers such as the mismatched GaInP on the GaAs (1 0 0) tilt to (1 1 1) 15° can improve the periodicity of the island separation distribution.
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