Abstract
This work reports on InP-based metamorphic quantum well structures with bismuth incorporation for mid-infrared applications. InAs1-xBix quantum well structures have been grown on InP-based metamorphic In0.83Al0.17As buffers and photoluminescence beyond 3.1 μm has been achieved at 300 K, which is longer than the referenced InAs quantum well. X-ray diffraction, cross-sectional transmission electron microscopy, and energy dispersive X-ray spectroscopy measurements reveal clear interfaces of InAsBi quantum well with low bismuth, while more defects and bismuth inhomogeneity were observed as more bismuth was incorporated.
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