Abstract
A new high electron mobility transistor (HEMT) using InAlAs/InGaAs grown on GaAs has been successfully realized. This structure, with an In content close to 30%, presents several advantages over conventional pseudomorphic HEMT on GaAs and lattice matched HEMT on InP. To accommodate the mismatch between the active layer and the GaAs substrate, a metamorphic buffer has been grown. High electron mobility with high two-dimensional electron gas density (20 700 cm2/V s with 4×1012 cm−2) and high Schottky barrier quality (Vb=0.68 V with η=1.1) have been obtained. A 3 μm gate length device has shown intrinsic transconductance as high as 530 mS/mm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
