Abstract
In the present work we report on the optimization of MBE growth conditionsand design of metamorphic In(Al)(Ga)As/GaAs heterostructures. This resultsin a strong decrease in the density of threading dislocations in the upper(active) layers and the improvement of surface morphology. Room-temperaturemobility in metamorphic modulation-doped InGaAs/InAlAs heterostructures was8100 cm2 V−1 s−1, which is comparable to that of InP-based structures and noticeably superior topseudomorphic GaAs-based structures.InAs quantum dots formed in a metamorphic InGaAs matrix on a GaAs substratewere used for lasers with promising characteristics (emitting wavelengths of1.46 µm, with thresholdcurrent densities of 1.4 kA cm−2).
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