Metamorphic GaAsP and InGaP Solar Cells on GaAs

Stephanie Tomasulo,Kevin Nay Yaung,Minjoo Larry Lee

doi:10.1109/jphotov.2011.2177640

Abstract

We have investigated wide-bandgap, metamorphic GaAs 1- x P x and In y Ga 1- y P solar cells on GaAs as potential subcell materials for future 4-6 junction devices. We identified and characterized morphological defects in tensile GaAs 1- x P x graded buffers that lead to a local reduction in carrier collection and a global increase in threading dislocation density (TDD). Through adjustments to the graded buffer structure, we minimized the formation of morphological defects and, hence, obtained TDDs ≈ 10 6 cm -2 for films with lattice mismatch ≤1.2%. Metamorphic In y Ga 1- y P solar cells were grown on these optimized GaAs 1- x P x graded buffers with bandgaps ( Eg ) as high as 2.07 eV and open-circuit voltages ( Voc ) as large as 1.49 V. Such high bandgap materials will be necessary to serve as the top subcell in future 4-6 junction devices. We have also shown that the relaxed GaAs 1- x P x itself could act as an efficient lower subcell in a multijunction device. GaAs 0.66 P 0.34 single-junction solar cells with Eg = 1.83 eV were fabricated with V oc = 1.28 V. Taken together, we have demonstrated that GaAs 1- x P x graded buffers are an appropriate platform for low-TDD, metamorphic GaAs 1- x P x and In y Ga 1- y P solar cells, covering a wide bandgap range.

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