Abstract
Rapid thermal processing has been utilized for shallow diffusions from , , or structures to increase the effective barrier height of Au‐(100) Schottky diodes. For diffusion from a structure, an increase in apparent barrier height of 0.2–0.34 eV with a reduction in reverse leakage of two orders of magnitude is obtained. High apparent barriers are also observed using , but, in general, the electrical characteristics are poor. Near‐ideal characteristics are observed for diffusion from layers, yielding a 0.11 eV barrier increase and a reduction in reverse current by a factor of ≈60. This corresponds to a p+ layer width of ⩽120Å and an acceptor to bulk donor ratio . However, degradation of the electrical characteristics due to dopant‐substrate reactions limits the enhancement attainable with the source. Methods for avoiding this problem with similar structures are proposed. A nonthermionic current component is observed for large barrier enhancements (>0.1 eV), causing the reverse current to saturate at a value larger than expected from the apparent barrier height determined by the forward current‐voltage characteristics. Possible origins for this excess current are discussed.
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