Abstract
In this study the performance of reactive ion etching (RIE) and magnetically enhanced reactive ion etching (MERIE) processes in pregate oxidation etching of the field oxide are compared. The comparison is carried out through metal–oxide–semiconductor (MOS) characterization of oxides and interfaces formed on etched silicon surfaces. The results revealed differences in the outcome of RIE and MERIE processes with the latter displaying overall superior characteristics. MERIE induced surface damage is shallower, and is mostly removed during oxide growth. RIE damage propagates deeper into the Si bulk and still influences the MOS devices even after the top Si layers are converted into the oxide. The results obtained emphasize the importance of adequate cleaning of silicon surfaces following RIE/MERIE processes.
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