Abstract
A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration of a laser structure on top of an HBT. A high growth temperature for the C–InGaAs base is favourable, to ensure no degradation during subsequent growth. Increasing the growth temperature after the base from 500°C to 680°C within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the dc gain and the turn-on voltage.
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