Metal–Organic Vapor Phase Epitaxy of GaN and InGaN Using Triethylamine with Ammonia as a Nitrogen Source

Abstract

Metal–organic vapor phase epitaxy (MOVPE) of GaN and InGaN was investigated using a combination of triethylamine (TEA) and ammonia (NH3) as the nitrogen source. The reaction of TEA and NH3 in the gas phase was verified by quadrupole mass spectrometry. By using this nitrogen source, a GaN epitaxial layer was grown at 600 °C with a peak photoluminescence at 375 nm. An InxGa1-xN (x=0.6) eptaxial layer was also grown at 600 °C. The indium to gallium concentration ratio was verified by secondary ion-microprobe mass spectrometry (SIMS) and X-ray diffraction. It is confirmed that this is an effective nitride source for the efficient growth of GaN and InGaN.