Abstract

This paper studies the characteristic of InAlAsSb grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). Composition analyses of InAlAsSb layers grown at various TMSb flow rates show, for the first time, that the Al concentration in the InAlAsSb layer decreases as the TMSb flow rate increases. We also find that the growth rate of InAlAsSb decreases remarkably as the TMSb flow rate increases. To clarify the reasons for these phenomena, the growth rates of the InAsSb and AlAsSb components are estimated. The growth rate of AlAsSb component shows a similar remarkable tendency with the InAlAsSb growth rate but that of InAsSb almost retains. This means that the decomposition of TMA is suppressed by the presence of TMSb. It is shown that excess Sb on the growth surface is related to this suppression.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call