Abstract
We have achieved metalorganic vapor-phase epitaxial growth of (211)B CdTe on Si without the requirement of a pregrowth high-temperature oxide desorption step. This was achieved by growing a thin Ge film on the starting (211) Si substrates. To get (211)B CdTe orientation, the Ge surface was exposed to As prior to the start of CdTe growth. A thin ZnTe interlayer between Ge and CdTe has been shown to improve the CdTe surface morphology.
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