Abstract
Erbium (Er) doping in GaNP during growth by metalorganic molecular-beam epitaxy was studied. Nitrogen (N) doping in GaP was possible up to ∼ 2% and exhibited large band-gap bowing consistent with previous reports. Er was doped in GaNP to study the codoping effect of Er and N. Er concentration was estimated to be about 0.2–0.8 at.% depending on the Er Knudsen cell temperature. Er doping in GaNP resulted in photoluminescence (PL) spectra similar to that of GaP in the visible-wavelength region, but the PL subpeaks at energies near the longitudinal-optical-phonon replica observed in GaP exhibited variations with Er doping. Although no sharp Er emissions originating from the 4f-4f inner-shell transitions were observed with the codoping, intense wide-band infrared (IR) luminescence covering the wavelength range from 1.1 to 1.6 µm was observed with the codoping of Er and N. The IR luminescence was linearly increased for the higher excitations, while the corresponding IR-PL intensity in undoped GaNP was weak and easily saturated.
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