Abstract
Epitaxial layers of CuGaSe2, CuAlSe2 and CuInSe2 have been successfully grown on the GaAs(100) substrate by means of metalorganic molecular beam epitaxy (MOMBE). Cyclopentadienylcoppertriethylphosphine (CpCuTEP), triethygallium (TEGa) , triisobuthylalminium (TIBAl), triethylindium (TEIn) and selenium have been used for precursors of Cu, Ga, Al, In and Se, respectively. Epilayers have been examined by X-ray diffraction, scanning electron microscopy, electron-probe micro analysis, Raman spectroscopy, photoluminescence and photoreflectance. The c-axis -oriented epilayers exhibiting good optical properties have been grown for both CuGaSe2 and CuInSe2. In spite of the poor reproducibility of the MOMBE growth of CuAlSe2, the epitaxial layer exhibiting the edge-emission at 2.64 eV at 8 K has been grown.
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