Abstract
ZnO is a promising material for light emitters in the UV region. For MOCVD growth no well-suited O-precursor is available. Three different high-purity oxygen precursors, i.e. iso-propanol, acetone, and N 2O were tested for the growth of ZnO on GaN/Si(1 1 1) templates. For iso-propanol pre-reactions are observed influencing the growth rate and limiting the growth temperature to below 500°C. Best layer quality is obtained around 450°C at 300 mbar reactor pressure and a VI–II ratio larger than 40. ZnO grown in a similar growth regime but using acetone as O-precursor exhibits a surface constructed from nanometer sized filaments. Most of the acetone-grown films have growth orientations of (1 0 1 ̄ 1) . Using N 2O higher growth temperatures are needed due to the poor decomposition of this gas. However, no prereactions are observed and (0 0 0 2) oriented layers with good X-ray ω-scans at ZnO-positions can be obtained around 800°C at 300 mbar and a VI–II ratio above 600.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
