Abstract
Indium selenide thin films have been deposited on glass, Si(1 0 0) and polycrystalline GaAs substrates from In[(SeP i Pr 2) 2N] 2Cl precursor by aerosol-assisted (AA) and low-pressure (LP) metal-organic chemical vapor deposition (MOCVD). X-ray powder diffraction (XRPD) patterns of these films indicated the growth of hexagonal γ-In 2Se 3. The morphologies of films have been studied by scanning electron microscopy (SEM) and compositions have been determined by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS).
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