Abstract
Ultrathin Cu seed layer was deposited by metallorganic chemical vapor deposition (MOCVD) on Ru layer using hexafluoroacety-lacetonate copper vinyltrimethylsilane [(hfac)Cu I (vtms)]. On Ru, the incubation time for Cu MOCVD was nonexistent. As compared with MOCVD Cu on TaN, the nuclei density of Cu was considerably increased on Ru and the wetting angle of Cu on Ru was small (22°). Therefore, the coalescence between Cu islands on Ru layer begins earlier by prohibiting the severe three-dimensional Cu growth that is generally observed on TaN layer. As a result, 10 nm thick continuous Cu film with 1.75 nm root-mean-squared surface roughness was easily prepared on 40 nm thick Ru at 150°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
