Abstract
Er-doped ZnO (ZnO:Er) thin films were grown by metalorganic chemical vapor deposition. Subsequent annealing improved the crystallinity of the ZnO:Er by suppressing nonradiative centers in the films. The annealed ZnO:Er showed clear 1.54 μm PL originating from the 4I13/2 → 4I15/2 transitions of Er3+ ions. This was in addition to luminescence from the ZnO host. Er-related PL intensity increased when prepared with annealing temperatures of 800–900 °C, while annealing at 1000 °C reduced the intensity. PL of 1.54 μm with high intensity was obtained in the ZnO:Er film that exhibited band-edge emission of free- or bound-excitons.
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