Abstract
Metal-nonmetal transition in amorphous Si–Au system has been investigated by means of electrical conductivity and thermoelectric power. It is found that the Au atoms act as acceptors and form a narrow band in pseudo-gap of amorphous Si. The metal-nonmetal transition occurs at x =14% and is assigned to the Anderson transition. In the nonmetallic region, the transport is dominated by the variable range hopping conduction in the lower temperature range and by the ambipolar conduction in the host band in the higher temperature range.
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