Metal-metal bonding in ScTaN2. A new compound in the system ScN-TaN.

Abstract

Gray microcrystalline powders of ScTaN(2) were prepared from solid-state reactions of delta-ScN with Ta(3)N(5) powders at T = 1770 K. According to thermal analyses the compound is stable against oxidation by O(2) up to temperatures of T = 800 K. In an Ar atmosphere ScTaN(2) decomposes above T = 1250 K and in a N(2) atmosphere above T = 2000 K under release of N(2) to form delta-ScN and beta-Ta(2)N. The crystal structure (space group P6(3)/mmc, No. 194, a = 305.34(3) pm, c = 1056.85(9) pm, Z = 2) was refined on the basis of X-ray and neutron powder diffraction data. It comprises alternating layers of ScN(6/3) octahedra and trigonal TaN(6/3) prisms, which are also observed in the binary nitrides delta-ScN and theta-TaN, respectively. A small degree of anti-site defects (about 5%) was detected. Only a small solubility of ScN in epsilon-TaN was observed, while the solubility of TaN in delta-ScN is >/=10 mol % at T = 1820 K. ScTaN(2) is a diamagnetic small gap semiconductor or a semimetal, as inferred from magnetization and electrical resistivity measurements, consistent with band structure calculations. Chemical bonding analyses with the COHP method yield significant covalent Ta-Ta interactions. Topological analyses of the electron localization function reveal unexpected Ta-Ta three-center bonding basins within seemingly empty trigonal prisms of the TaN(6/3) layers.