Abstract
Metallurgy for high temperature SiC die attach involves the substrate metallization, die metallization, and die attach material. This paper examines off-eutectic Au-Sn as the die attach alloy with a PtAu thick film metallization on AlN substrates. A pure Au thick film layer was printed over the PtAu thick film layer. The SiC backside metallizations evaluated were Ti/TaSi/Pt/Au and Cr/NiCr/Au. Die shear tests were performed after aging at 500°C and after thermal cycling. The shear test results and failure surface analysis are discussed. Nanoparticle Ag and liquid transient phase bonding with Ag based metallurgies have been proposed for high temperature die attach. Data on the migration of sintered nano-particle Ag and thin film Ag dc bias during storage in air at 300°C and 375°C are presented. Migration of Ag is a potential failure mechanism for Ag based high temperature metallurgies.
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