Abstract
The metallurgical properties and characteristics of a Pd-based ohmic contact layer to p-type GaP have been studied by SEM XRD, EDAX and AES profiling measurements. The results show that (1) the alloying temperature is a very important factor for the quality of the ohmic contact layer; when the hole concentration of the p-type GaP is 2 × 10 17 cm −3 a specific contact resistance of 6 × 10 −5 ω cm −2 has been obtained at an alloying temperature of 550°C; (2) a layer with a M−p +−p structure is formed at the interface, the main metallurgical composition being ZnP 2, Zn 3P 2 and (Ga 4Pd 7Zn 3)14 R . The correlation between the quality of the ohmic contact and the microstructure of the contact layer has also been discussed.
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