Abstract
AbstractIn dislocation‐free floating‐zone silicon crystals two types of microdefects were observed and analyzed by means of optical and electron‐microscopical methods. Microdefects of type I occur in swirl‐type arrangements throughout the whole wafer and appear as etch hillocks below which one can find second phase particles. Due to the chemical‐mechanical polishing near the wafer surface microdefects of type II are generated which also occur in spiral arrangements. These defects could be identified to be plate‐like vacancy agglomerates on {111} planes.
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