Abstract
Interdigitated back-contact (IBC) silicon (Si) solar cells are attracting increased attention due to the potential of higher efficiency that comes from eliminating front-surface shading. However, as sources of recombination loss continue to be reduced due to improved processing and use of high-quality n-type wafers, parasitic absorption in the rear metal can limit cell performance. This paper reports experimental and simulation results that identify the optical advantages of an IBC metallization method, which employs a novolac resin layer to enhance the insulation of the cell from a metal electrode comprising a sputtered Ti/Ag metal stack and plated Cu. The polymer layer can electrically decouple the metal geometry from the doping geometry and also helps to reduce the parasitic absorption at the cell rear surface by increasing the distance between the metal and Si absorber. The optical properties of the Ti/Ag stacks formed over the novolac resin were comparable to those with an Ag reflector; however, the Ti/Ag reflector offered the additional benefit of contact resistivity of < 1 mΩ·cm2 to both the n+ and p+ Si regions of the diffused IBC cells.
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