Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Muharrem Acerce,Sibel Ebru Yalcin,Gautam Gupta,Sol Torrel,Rajesh Kappera,Pulickel M Ajayan,Manish Chhowalla,Wesley Jen,Aditya D Mohite,Brittany Branch,Weibing Chen,Sina Najmaei,Damien Voiry,Jun Lou,Sidong Lei

doi:10.1063/1.4896077

Abstract

Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.

Highlights

Short channel effects in current state of the art electronics lead to substantial finite current in the off state, which in turn increases the standby power consumption
There is a substantial need to find new semiconductors that are compatible with existing complementary metal oxide semiconductor (CMOS) infrastructure and can mitigate the short channel effects
The knowledge gained over the past ten years in synthesis, processing, handling, device fabrication, and testing has been tremendously helpful in discovery of other 2D materials

Summary

Introduction

Short channel effects in current state of the art electronics lead to substantial finite current in the off state, which in turn increases the standby power consumption. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Results

Conclusion