Abstract
Disordered VO 2 films were prepared by electrochemical anodic oxidation of vanadium. The crystallinity, stoichiometry, conductivity, Hall effect, ESR, and optical adsorption data in disordered VO 2 films have been studied. The main result of this work is that metal-insulator phase transition (MIT) has been preserved in the absence of long-range crystallographic order. A Peierls-like instability which is required for the realization of long-range crystallographic order is therefore not the driving force of the MIT in VO 2. The properties of the disordered VO 2 are compared to those of crystalline VO 2 in metallic and semiconductor phases. The essential role of electron localization in influencing the behavior of the disordered VO 2 is shown. Possible mechanisms of electron localization in the semiconductor and metallic phases are discussed.
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