Abstract
In this work, modification of graphitic carbon nitride photocatalyst with acid was accomplished with a facile method through reflux in different acidic substances. The g-C3N4-based material was found to be a metal-free photocatalyst useful for the selective oxidation of benzyl alcohol with dioxygen as the oxidant under visible light irradiation. Acid modification had a significant influence on the photocatalytic performance of g-C3N4. Among all acid tested, sulfuric acid-modified g-C3N4 showed the highest catalytic activity and gave benzaldehyde in 23% yield for 4h under visible light irradiation, which was about 2.5 times higher than that of g-C3N4. The acid modification effectively improved surface area, reduced structural size, enlarged band gap, enhanced surface chemical state, and facilitated photoinduced charge separation, contributing to the enhanced photocatalytic activity. It is hoped that our work can open promising prospects for the utilization of metal free g-C3N4-based semiconductor as visible-light photocatalyst for selective organic transformation.
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