Metal-Assisted Chemical Etching of Silicon Using Oxygen as an Oxidizing Agent: Influence of HF Concentration on Etching Rate and Pore Morphology

Abstract

Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a HF solution without electrical bias. We have been studying this etching using dissolved oxygen as an oxidizing agent and recently reported that the catalytic activity of noble metal particles including silver, gold, platinum, and rhodium, influences the cathodic reduction of oxygen and controls the etching rate. In this paper, we investigate the influence of the HF concentration on the etching rate and the pore morphology. In the case of high HF concentration, the etching rate is independent of the HF concentration and depends on the oxygen concentration and the catalytic activity of the metal particles. In the low HF concentration case, the etching rate depends on the HF concentration and is independent of the oxygen concentration and the catalytic activity. The pore morphology is also changed by the HF concentration.