Metal–semiconductor–metal photodiodes fabricated from thin-film diamond

Abstract

A metal–semiconductor–metal Schottky barrier photodetector has been fabricated on a “hydrogen-doped” surface-conducting chemical vapor deposition (CVD) diamond. The device is fabricated in one step by forming two back-to-back aluminum Schottky diodes on the p-type surface. This simple process is compatible with previously reported metal–semiconductor field-effect transistor fabrication on this type of CVD diamond and offers the prospect of the monolithic integration of a ultraviolet detector and active circuitry. Preliminary electrical and optical characteristics of the device have been measured, including the spectral response over the range 180–800 nm. The device exhibits a linear response with the applied optical power at 220 nm, operates at a bias of only 2 V, and shows visible blind characteristics, with a spectral discrimination of three orders of magnitude as determined from the ratio of 200–550 nm responses.