Abstract
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.
Highlights
The monolithic integration of photonic components and devices on a silicon (Si) platform to create electronic–photonic integrated circuits (EPICs) has attracted immense research interest over recent decades [1,2,3,4,5]
III-V semiconductor compounds are mostly used for high-speed photodetection, these compounds are not compatible with the Si complementary metal-oxide-semiconductor (CMOS) IC technology [6]
We demonstrate the GeSn Metal-semiconductor-metal photodetectors (MSM PDs) on the Si platform for efficient photodetection in the entire telecommunication bands
Summary
The monolithic integration of photonic components and devices on a silicon (Si) platform to create electronic–photonic integrated circuits (EPICs) has attracted immense research interest over recent decades [1,2,3,4,5]. The compatibility with Si-based CMOS processing technology, monolithic integration on the same Si chip [7], and low fabrication cost make group-IV materials very attractive to develop CMOS-compatible photonic devices. The realization of those devices for the most important fiber-optical communication window (1310 and 1550 nm) by Si is not possible due to its bandgap of 1.12 eV [8], resulting in a cutoff wavelength of ~1100 nm. This problem can be partially circumvented by using Ge, as its direct bandgap (0.8 eV) supports 1310 nm at room temperature. The entire telecommunication bands cannot be covered by Ge based photodetectors (PDs)
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