Metal–semiconductor–metal detectors ZnS/GaP for the ultraviolet and visible part of the spectrum with electrically tunable spectral photosensitivity

Abstract

High-quality ZnS epitaxial layers grown on GaP semiconductor substrates by MOCVD method. Photodetectors of the visible and UV parts of the spectrum based on new interdigitated Schottky barrier metal–semiconductor–metal (MSM) contacts to semiconductor structure ZnS/GaP. The detectors exhibit low dark current values. The dependence of the characteristics of the spectral response of detectors on voltage has been established offsets. It was found that the long-wavelength response boundary of ZnS/GaP MSM detectors can shift from 355 to 450 nm when the bias voltage changes from 10 to 30 V. At the maximum photosensitivity wavelength of 450 nm, the ampere-watt sensitivity of the detector was 0.3 A/W at a bias voltage of 60 V, and the quantum efficiency was 82%.