Abstract
A two-wavelength demultiplexing metal-semiconductor-metal (MSM) waveguide photodetector has been fabricated using impurity-free vacancy diffusion and partial intermixing of an InGaAs/GaAs strained layer quantum well structure. The importance of growth and process parameters, such as aluminium composition in the cladding layer and the oxygen plasma treatment of the sample during processing, on the related device performance is discussed. This photodetector is a potential candidate for monolithic integration with other optoelectronic devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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